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BUZ111S MOSFET Transistor

The BUZ111S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ111S transistor as follows.

Circuit diagram symbol of the BUZ111S transistor

BUZ111S Transistor Specification

Transistor Code BUZ111S
Transistor Type MOSFET
Control Channel Type N-Channel
Package P-TO220
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 1100pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 125nC

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