BUZ104S MOSFET Transistor

The BUZ104S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ104S transistor as follows.

BUZ104S Transistor Specification

Transistor Code		BUZ104S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		9.5nC

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