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BUZ102SL MOSFET Transistor

The BUZ102SL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ102SL transistor as follows.

Circuit diagram symbol of the BUZ102SL transistor

BUZ102SL Transistor Specification

Transistor Code BUZ102SL
Transistor Type MOSFET
Control Channel Type N-Channel
Package P-TO220
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 47A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 410pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 60nC

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