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BUZ101SL MOSFET Transistor

The BUZ101SL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ101SL transistor as follows.

Circuit diagram symbol of the BUZ101SL transistor

BUZ101SL Transistor Specification

Transistor Code BUZ101SL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 14V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 55W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 24nC

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