BUZ101S MOSFET Transistor

The BUZ101S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ101S transistor as follows.

BUZ101S Transistor Specification

Transistor Code		BUZ101S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17nC

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