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BUZ100SL-4 MOSFET Transistor

The BUZ100SL-4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ100SL-4 transistor as follows.

Circuit diagram symbol of the BUZ100SL-4 transistor

BUZ100SL-4 Transistor Specification

Transistor Code BUZ100SL-4
Transistor Type MOSFET
Control Channel Type N-Channel
Package P-DSO-28
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 14V
Drain Current (Maximum) ID 7.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.023Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 600pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 67nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 93nC

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