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BUZ100S MOSFET Transistor

The BUZ100S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ100S transistor as follows.

Circuit diagram symbol of the BUZ100S transistor

BUZ100S Transistor Specification

Transistor Code BUZ100S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 77A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 170W
Drain-Source Capacitance 615pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 65nC

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