BUP69 MOSFET Transistor

The BUP69 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUP69 transistor as follows.

BUP69 Transistor Specification

Transistor Code		BUP69
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	7.93A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	175W
Operating Junction Temperature (Maximum)		150°C

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