BUP65 MOSFET Transistor

The BUP65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUP65 transistor as follows.

BUP65 Transistor Specification

Transistor Code		BUP65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	450V
Drain Current (Maximum)	ID	4.47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	100W
Operating Junction Temperature (Maximum)		150°C

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