The BUK9Y153-100E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the BUK9Y153-100E transistor as follows.
Transistor Code | BUK9Y153-100E | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | LFPAK56_POWER-SO8 | |
Transistor SMD Code | 915310E | |
Drain-Source Voltage (Maximum) | VDS | 100V |
Gate-Source Voltage (Maximum) | VGS | 10V |
Drain Current (Maximum) | ID | 9.4A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.146Ohm |
Power Dissipation (Maximum) | PD | 37W |
Drain-Source Capacitance | 59pF | |
Operating Junction Temperature (Maximum) | 175°C | |
Rise Time | 10.9nS | |
Gate-Threshold Voltage (Maximum) | 2.1V | |
Total Gate Charge | 6.8nC |
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