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BUK9Y153-100E MOSFET Transistor

The BUK9Y153-100E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK9Y153-100E transistor as follows.

Circuit diagram symbol of the BUK9Y153-100E transistor

BUK9Y153-100E Transistor Specification

Transistor Code BUK9Y153-100E
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK56_POWER-SO8
Transistor SMD Code 915310E
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 9.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.146Ohm
Power Dissipation (Maximum) PD 37W
Drain-Source Capacitance 59pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 10.9nS
Gate-Threshold Voltage (Maximum) 2.1V
Total Gate Charge 6.8nC

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