BUK9E4R9-60E MOSFET Transistor

The BUK9E4R9-60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK9E4R9-60E transistor as follows.

BUK9E4R9-60E Transistor Specification

Transistor Code		BUK9E4R9-60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	234W
Drain-Source Capacitance		607pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		65nC

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