BUK965R8-100E MOSFET Transistor

The BUK965R8-100E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK965R8-100E transistor as follows.

BUK965R8-100E Transistor Specification

Transistor Code		BUK965R8-100E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	357W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		168nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		133nC

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