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BUK965R8-100E MOSFET Transistor

The BUK965R8-100E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK965R8-100E transistor as follows.

Circuit diagram symbol of the BUK965R8-100E transistor

BUK965R8-100E Transistor Specification

Transistor Code BUK965R8-100E
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0056Ohm
Power Dissipation (Maximum) PD 357W
Drain-Source Capacitance 725pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 168nS
Gate-Threshold Voltage (Maximum) 2.1V
Total Gate Charge 133nC

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