BUK956R1-100E MOSFET Transistor

The BUK956R1-100E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK956R1-100E transistor as follows.

BUK956R1-100E Transistor Specification

Transistor Code		BUK956R1-100E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0059Ohm
Power Dissipation (Maximum)	PD	349W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		168nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		133nC

UXPython is not the creator or an official representative of the BUK956R1-100E MOSFET transistor. You can download the official BUK956R1-100E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRF1404ZPBF MOSFET Transistor IRF740LC MOSFET Transistor IRF3708PBF MOSFET Transistor PHP34NQ11T MOSFET Transistor SUP85N02-03 MOSFET Transistor HY5N50T MOSFET Transistor SIHP15N60E MOSFET Transistor HY8N50T MOSFET Transistor BUZ102AL MOSFET Transistor BUZ102S MOSFET Transistor IRFZ14PBF MOSFET Transistor PHP36N03LT MOSFET Transistor IXFP7N60P3 MOSFET Transistor BUZ102 MOSFET Transistor FMP07N50E MOSFET Transistor PHP75NQ08T MOSFET Transistor SIHFB9N60A MOSFET Transistor HY110N06T MOSFET Transistor CS10N65A8HD MOSFET Transistor HY80N075T MOSFET Transistor