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BUK7Y35-55B MOSFET Transistor

The BUK7Y35-55B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK7Y35-55B transistor as follows.

Circuit diagram symbol of the BUK7Y35-55B transistor

BUK7Y35-55B Transistor Specification

Transistor Code BUK7Y35-55B
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 28.43A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.035Ohm
Power Dissipation (Maximum) PD 60W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 13.1nC

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