BUK7Y19-100E MOSFET Transistor

The BUK7Y19-100E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK7Y19-100E transistor as follows.

BUK7Y19-100E Transistor Specification

Transistor Code		BUK7Y19-100E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK56_POWER-SO8
Transistor SMD Code		71910E
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	169W
Drain-Source Capacitance		242pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		55nC

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