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BUK7E4R0-80E MOSFET Transistor

The BUK7E4R0-80E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK7E4R0-80E transistor as follows.

Circuit diagram symbol of the BUK7E4R0-80E transistor

BUK7E4R0-80E Transistor Specification

Transistor Code BUK7E4R0-80E
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.004Ohm
Power Dissipation (Maximum) PD 349W
Drain-Source Capacitance 840pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 48nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 169nC

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