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BUK426-1000B MOSFET Transistor

The BUK426-1000B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK426-1000B transistor as follows.

Circuit diagram symbol of the BUK426-1000B transistor

BUK426-1000B Transistor Specification

Transistor Code BUK426-1000B
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT199
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 1.25pF
Operating Junction Temperature (Maximum) 150°C

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More Transistors Datasheets in N-Channel MOSFET

BUK426-1000A BUK426-1000A MOSFET Transistor