BSZ160N10NS3G MOSFET Transistor

The BSZ160N10NS3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSZ160N10NS3G transistor as follows.

BSZ160N10NS3G Transistor Specification

Transistor Code		BSZ160N10NS3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		S3O8
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	63W
Total Gate Charge		19nC

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