BSZ100N06LS3G MOSFET Transistor

The BSZ100N06LS3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSZ100N06LS3G transistor as follows.

BSZ100N06LS3G Transistor Specification

Transistor Code		BSZ100N06LS3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		S3O8
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	50W

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