BSZ086P03NS3EG MOSFET Transistor

The BSZ086P03NS3EG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSZ086P03NS3EG transistor as follows.

BSZ086P03NS3EG Transistor Specification

Transistor Code		BSZ086P03NS3EG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		S3O8
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0086Ohm
Power Dissipation (Maximum)	PD	69W
Total Gate Charge		43.2nC

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