BST100 MOSFET Transistor

The BST100 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BST100 transistor as follows.

BST100 Transistor Specification

Transistor Code		BST100
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.5Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C

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