BSS806N MOSFET Transistor

The BSS806N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSS806N transistor as follows.

BSS806N Transistor Specification

Transistor Code		BSS806N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Transistor SMD Code		YEs
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.057Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		118pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.9nS

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