BSH111 MOSFET Transistor

The BSH111 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSH111 transistor as follows.

BSH111 Transistor Specification

Transistor Code		BSH111
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO236AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.335A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	0.83W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.3V

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