BSH108 MOSFET Transistor

The BSH108 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSH108 transistor as follows.

BSH108 Transistor Specification

Transistor Code		BSH108
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO236AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	0.83W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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