BSH105 MOSFET Transistor

The BSH105 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSH105 transistor as follows.

BSH105 Transistor Specification

Transistor Code		BSH105
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO236AB
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	0.417W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.57V

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