BSC196N10NSG MOSFET Transistor

The BSC196N10NSG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC196N10NSG transistor as follows.

BSC196N10NSG Transistor Specification

Transistor Code		BSC196N10NSG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSO8
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0196Ohm
Power Dissipation (Maximum)	PD	78W
Total Gate Charge		25nC

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