BSC12DN20NS3G MOSFET Transistor

The BSC12DN20NS3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC12DN20NS3G transistor as follows.

BSC12DN20NS3G Transistor Specification

Transistor Code		BSC12DN20NS3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSO8
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	11.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	50W

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