BSC123N10LSG MOSFET Transistor

The BSC123N10LSG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC123N10LSG transistor as follows.

BSC123N10LSG Transistor Specification

Transistor Code		BSC123N10LSG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSO8
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	71A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0123Ohm
Power Dissipation (Maximum)	PD	114W
Total Gate Charge		51nC

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