BSC060N10NS3G MOSFET Transistor

The BSC060N10NS3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC060N10NS3G transistor as follows.

BSC060N10NS3G Transistor Specification

Transistor Code		BSC060N10NS3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSO8
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	125W
Total Gate Charge		51nC

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