BSC042NE7NS3G MOSFET Transistor

The BSC042NE7NS3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC042NE7NS3G transistor as follows.

BSC042NE7NS3G Transistor Specification

Transistor Code		BSC042NE7NS3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSO8
Drain-Source Voltage (Maximum)	VDS	75V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	125W
Total Gate Charge		52nC

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