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BSB017N03LX3G MOSFET Transistor

The BSB017N03LX3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSB017N03LX3G transistor as follows.

Circuit diagram symbol of the BSB017N03LX3G transistor

BSB017N03LX3G Transistor Specification

Transistor Code BSB017N03LX3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package CANPAK
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 147A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0017Ohm
Power Dissipation (Maximum) PD 57W
Total Gate Charge 37nC

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