BSB015N04NX3G MOSFET Transistor

The BSB015N04NX3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSB015N04NX3G transistor as follows.

BSB015N04NX3G Transistor Specification

Transistor Code		BSB015N04NX3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CANPAK
Drain-Source Voltage (Maximum)	VDS	40V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0015Ohm
Power Dissipation (Maximum)	PD	89W
Total Gate Charge		107nC

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