BSB012NE2LX MOSFET Transistor

The BSB012NE2LX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSB012NE2LX transistor as follows.

BSB012NE2LX Transistor Specification

Transistor Code		BSB012NE2LX
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CANPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0012Ohm
Power Dissipation (Maximum)	PD	89W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		32nC

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