BSB012N03LX3G MOSFET Transistor

The BSB012N03LX3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSB012N03LX3G transistor as follows.

BSB012N03LX3G Transistor Specification

Transistor Code		BSB012N03LX3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CANPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0012Ohm
Power Dissipation (Maximum)	PD	89W
Total Gate Charge		127nC

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