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BRS1N70 MOSFET Transistor

The BRS1N70 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRS1N70 transistor as follows.

Circuit diagram symbol of the BRS1N70 transistor

BRS1N70 Transistor Specification

Transistor Code BRS1N70
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO92
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 15Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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