BRS1N60 MOSFET Transistor

The BRS1N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRS1N60 transistor as follows.

BRS1N60 Transistor Specification

Transistor Code		BRS1N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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