BRM501D MOSFET Transistor

The BRM501D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRM501D transistor as follows.

BRM501D Transistor Specification

Transistor Code		BRM501D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	700Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		4.53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55.8nS

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