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BRI3N80 MOSFET Transistor

The BRI3N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRI3N80 transistor as follows.

Circuit diagram symbol of the BRI3N80 transistor

BRI3N80 Transistor Specification

Transistor Code BRI3N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.8Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS

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