BRF12N60 MOSFET Transistor

The BRF12N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRF12N60 transistor as follows.

BRF12N60 Transistor Specification

Transistor Code		BRF12N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FL
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	51W
Drain-Source Capacitance		182pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS

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