BRD6N70 MOSFET Transistor

The BRD6N70 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRD6N70 transistor as follows.

BRD6N70 Transistor Specification

Transistor Code		BRD6N70
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		87.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS

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