BR8N60 MOSFET Transistor

The BR8N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BR8N60 transistor as follows.

BR8N60 Transistor Specification

Transistor Code		BR8N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60.5nS

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