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BR80N75 MOSFET Transistor

The BR80N75 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BR80N75 transistor as follows.

Circuit diagram symbol of the BR80N75 transistor

BR80N75 Transistor Specification

Transistor Code BR80N75
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 730pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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