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BLA6G1011-200R MOSFET Transistor

The BLA6G1011-200R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BLA6G1011-200R transistor as follows.

Circuit diagram symbol of the BLA6G1011-200R transistor

BLA6G1011-200R Transistor Specification

Transistor Code BLA6G1011-200R
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT502A
Drain-Source Voltage (Maximum) VDS 28V
Drain Current (Maximum) ID 49A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.093Ohm
Power Dissipation (Maximum) PD 200W

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