BFC11 MOSFET Transistor

The BFC11 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BFC11 transistor as follows.

BFC11 Transistor Specification

Transistor Code		BFC11
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		5780pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		245nC

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