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BFC10 MOSFET Transistor

The BFC10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BFC10 transistor as follows.

Circuit diagram symbol of the BFC10 transistor

BFC10 Transistor Specification

Transistor Code BFC10
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT227
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 520W
Drain-Source Capacitance 5425pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 235nC

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