BF965 MOSFET Transistor

The BF965 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF965 transistor as follows.

BF965 Transistor Specification

Transistor Code		BF965
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MACROX
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8.5V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		1pF
Operating Junction Temperature (Maximum)		150°C

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