BF1109R MOSFET Transistor

The BF1109R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF1109R transistor as follows.

BF1109R Transistor Specification

Transistor Code		BF1109R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT143R
Transistor SMD Code		NBp
Drain-Source Voltage (Maximum)	VDS	11V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		2.2pF
Operating Junction Temperature (Maximum)		150°C

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