BF1101WR MOSFET Transistor

The BF1101WR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF1101WR transistor as follows.

BF1101WR Transistor Specification

Transistor Code		BF1101WR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT343R
Drain-Source Voltage (Maximum)	VDS	7V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		2.2pF
Operating Junction Temperature (Maximum)		150°C

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