BF1100WR MOSFET Transistor

The BF1100WR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF1100WR transistor as follows.

BF1100WR Transistor Specification

Transistor Code		BF1100WR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT343R
Transistor SMD Code		MF
Drain-Source Voltage (Maximum)	VDS	14V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.28W
Drain-Source Capacitance		2.2pF
Operating Junction Temperature (Maximum)		150°C

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