ATP302 MOSFET Transistor

The ATP302 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ATP302 transistor as follows.

ATP302 Transistor Specification

Transistor Code		ATP302
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		ATPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	70W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		115nC

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